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SLP13N50C

N-Channel MOSFET

SLP13N50C Features

* - 13A, 500V, RDS(on)typ. = 386mΩ@VGS = 10 V - Low gate charge ( typical 44nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP13N50C SLF13N50C V

SLP13N50C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP13N50C Datasheet (1.28 MB)

Preview of SLP13N50C PDF

Datasheet Details

Part number:

SLP13N50C

Manufacturer:

Maple Semiconductor

File Size:

1.28 MB

Description:

N-channel mosfet.

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SLP13N50C N-Channel MOSFET Maple Semiconductor

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