SLP20N50C Datasheet - Maple Semiconductor

SLP20N50C N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP20N50C Features

* - 20A, 500V, RDS(on)typ. = 220mΩ@VGS = 10 V - Low gate charge ( typical 74.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP20N50C SLF20N50C

SLP20N50C-MapleSemiconductor.pdf