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SLP2N60UZ Datasheet - Maple Semiconductor

SLP2N60UZ N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP2N60UZ Features

* - 2,0A, 600V, RDS(on)typ = 4Ω@VGS = 10 V - Low gate charge ( typical 5.8nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, T

SLP2N60UZ-MapleSemiconductor.pdf

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Datasheet Details

Part number:

SLP2N60UZ

Manufacturer:

Maple Semiconductor

File Size:

1.01 MB

Description:

N-channel mosfet.

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SLP2N60UZ SLP2N60UZ N-Channel MOSFET Maple Semiconductor

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