SLP9N90CZ

N-Channel MOSFET

Maple Semiconductor

SLP9N90CZ Features

* - 9A, 900V, RDS(on)typ. = 1.0Ω@VGS = 10 V - Low gate charge ( typical 69.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol VDSS ID IDM VGSS EAS IAR EAR dv/d

SLP9N90CZ General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP9N90CZ Datasheet (1.83 MB)

SLP9N90CZ Datasheet Preview — Preview of SLP9N90CZ PDF

Datasheet Details

Part number:

SLP9N90CZ

Manufacturer:

Maple Semiconductor

File Size:

1.83 MB

Description:

N-channel mosfet.

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SLP9N90CZ N-Channel MOSFET Maple Semiconductor

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SLP9N90CZ Features

SLP9N90CZ General Description

Datasheet Details

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Description:

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