SLP9N90CZ Datasheet (Maple Semiconductor)

SLP9N90CZ, N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices

SLP9N90CZ Features

* - 9A, 900V, RDS(on)typ. = 1.0Ω@VGS = 10 V - Low gate charge ( typical 69.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol VDSS ID IDM VGSS EAS IAR EAR dv/d