SLD50R550SJ - N-Channel MOSFET

Maple Semiconductor

Datasheet Details

Part number	SLD50R550SJ
Manufacturer	Maple Semiconductor
File Size	632.79 KB
Description	N-Channel MOSFET
Datasheet	SLD50R550SJ-MapleSemiconductor.pdf

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology.

- 7.6A, 500V, RDS(on) typ. = 0.5Ω@VGS = 10 V - Low gate charge ( typical 25nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD50R550SJ/SLU50R550SJ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage.

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Published: Apr 11, 2017 |