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SLF12N60UZ - N-Channel MOSFET

SLF12N60UZ Description

SLP12N60UZ / SLF12N60UZ SLP12N60UZ / SLF12N60UZ 600V N-Channel MOSFET General .
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

SLF12N60UZ Features

* - 12.0A, 600V, RDS(on)typ = 0.46Ω@VGS = 10 V - Low gate charge ( typical 42.7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP12N60UZ SLF12N60UZ VDS

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N-Channel MOSFET Maple Semiconductor
Maple Semiconductor SLF12N60UZ-like datasheet