SLP12N65S - N-Channel MOSFET

Maple Semiconductor

Datasheet Details

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 12A, 650V, RDS(on) typ. = 0.62Ω@VGS = 10 V - Low gate charge ( typical 35 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP12N65S SLF12N65S VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single.

📁 SLP12N65S Similar Datasheet

Other Datasheets by Maple Semiconductor

Published: Dec 28, 2018 |