ME2306 N-Channel Enhancement Mode Mosfet

Matsuki

Description

N-Channel Enhancement Mode MOSFET GENERAL .
The ME2306 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

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ME2306 Datasheet Preview — Preview of ME2306 PDF

Datasheet Specifications

Part number: ME2306
Manufacturer: Matsuki
File Size: 1.02 MB
Datasheet: ME2306-Matsuki.pdf
Description: N-Channel Enhancement Mode Mosfet

Features

* RDS(ON)≦37mΩ@VGS=10V
* RDS(ON)≦49mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)

ME2306 Distributors

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ME2306 N-Channel Enhancement Mode Mosfet Matsuki

Matsuki ME2306-like datasheet