ME2306-G, ME2306 N-Channel Enhancement Mode Mosfet

Matsuki

Description

N-Channel Enhancement Mode MOSFET GENERAL .
The ME2306 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

📥 Download Datasheet

ME2306-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME2306-G, ME2306. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: ME2306-G, ME2306
Manufacturer: Matsuki
File Size: 1.02 MB
Datasheet: ME2306-Matsuki.pdf
Description: N-Channel Enhancement Mode Mosfet
Note: This datasheet PDF includes multiple part numbers: ME2306-G, ME2306.
Please refer to the document for exact specifications by model.

Features

* RDS(ON)≦37mΩ@VGS=10V
* RDS(ON)≦49mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)

ME2306-G Distributors

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📌 All Tags

ME2306 N-Channel Enhancement Mode Mosfet Matsuki

Matsuki ME2306-G-like datasheet