ME2306-G Datasheet, Mosfet, Matsuki

✔ ME2306-G Features

RDS(ON)≦37mΩ@VGS=10V
RDS(ON)≦49mΩ@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability P

PDF File Details

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Part number:

ME2306-G

Manufacturer:

Matsuki

File Size:

1.02 MB

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📄 Datasheet

Description:

N-channel enhancement mode mosfet. The ME2306 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. T

📥 Download PDF (1.02 MB)

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ME2306-G N-Channel Enhancement Mode Mosfet Matsuki