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ME2306-G Datasheet - Matsuki

ME2306-G N-Channel Enhancement Mode Mosfet

The ME2306 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular pho.

ME2306-G Datasheet (1.02 MB)

Preview of ME2306-G PDF

Datasheet Details

Part number:

ME2306-G

Manufacturer:

Matsuki

File Size:

1.02 MB

Description:

N-channel enhancement mode mosfet.

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ME2306-G N-Channel Enhancement Mode Mosfet Matsuki

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