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ME2306-G, ME2306 - N-Channel Enhancement Mode Mosfet

ME2306-G Description

N-Channel Enhancement Mode MOSFET GENERAL .
The ME2306 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

ME2306-G Features

* RDS(ON)≦37mΩ@VGS=10V
* RDS(ON)≦49mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ME2306-G, ME2306. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
ME2306-G, ME2306
Manufacturer
Matsuki
File Size
1.02 MB
Datasheet
ME2306-Matsuki.pdf
Description
N-Channel Enhancement Mode Mosfet
Note
This datasheet PDF includes multiple part numbers: ME2306-G, ME2306.
Please refer to the document for exact specifications by model.

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📌 All Tags

N-Channel Enhancement Mode Mosfet Matsuki
Matsuki ME2306-G-like datasheet