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ME2306AS - N-Channel 30V (D-S) MOSFET

ME2306AS Description

N-Channel 30V (D-S)MOSFET ME2306AS/ME2306AS-G GENERAL .
The ME2306AS is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

ME2306AS Features

* RDS(ON)≦32mΩ@VGS=10V
* RDS(ON)≦38mΩ@VGS=4.5V
* RDS(ON)≦50mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)

ME2306AS Applications

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch
* DSC
* LCD Display inverter Ordering Information: ME2306AS (Pb-free)

📥 Download Datasheet

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Datasheet Details

Part number
ME2306AS
Manufacturer
Matsuki
File Size
1.01 MB
Datasheet
ME2306AS-Matsuki.pdf
Description
N-Channel 30V (D-S) MOSFET

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N-Channel 30V D-S MOSFET Matsuki
Matsuki ME2306AS-like datasheet