ME2306A Datasheet (Matsuki) - N-Channel 30V (D-S) MOSFET

ME2306A, N-Channel 30V (D-S) MOSFET

The ME2306A is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular ph

ME2306A Features

* RDS(ON)≦32mΩ@VGS=10V

* RDS(ON)≦38mΩ@VGS=4.5V

* RDS(ON)≦50mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery