ME2325-G, ME2325 Datasheet - Matsuki

ME2325-G P-Channel 30V (D-S) MOSFET

The ME2325 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as .

ME2325-G Features

* RDS(ON)≦50mΩ@VGS=-10V

* RDS(ON)≦76mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* DC/DC

ME2325-Matsuki.pdf

ME2325-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME2325-G, ME2325. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME2325-G, ME2325

Manufacturer:

Matsuki

File Size:

1.05 MB

Description:

P-channel 30v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME2325-G, ME2325.
Please refer to the document for exact specifications by model.

ME2325-G Distributor

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TAGS

ME2325-G ME2325 P-Channel 30V D-S MOSFET Matsuki