ME2320D-G, ME2320D Datasheet - Matsuki

ME2320D-G N-Channel 20V (D-S) MOSFET

The ME2320D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME2320D-G Features

* RDS(ON)=21m @VGS=4.5V RDS(ON)=25 m @VGS=2.5V RDS(ON)=33 m @VGS=1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DS

ME2320D-Matsuki.pdf