ME2322-G, ME2322 Datasheet - Matsuki

ME2322-G N-Channel 55V (D-S) MOSFET

The ME2322 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as .

ME2322-G Features

* RDS(ON)≦80mΩ@VGS=10V

* RDS(ON)≦90mΩ@VGS=4.5V

* RDS(ON)≦120mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Load Sw

ME2322-Matsuki.pdf

ME2322-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME2322-G, ME2322. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME2322-G, ME2322

Manufacturer:

Matsuki

File Size:

1.04 MB

Description:

N-channel 55v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME2322-G, ME2322.
Please refer to the document for exact specifications by model.

ME2322-G Distributor

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ME2322-G ME2322 N-Channel 55V D-S MOSFET Matsuki