ME2N7002DKW-G Datasheet (Matsuki) - Dual N-Channel MOSFET

ME2N7002DKW-G, Dual N-Channel MOSFET

The ME2N7002DKW-G is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage applicat

ME2N7002DKW-G Features

* RDS(ON)≦3Ω@VGS=10V

* RDS(ON)≦4Ω@VGS=4.5V

* RDS(ON)≦4.5Ω@VGS=3V

* ESD Protection HBM >2KV

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Con