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ME35N06 N-Channel 60V (D-S) MOSFET

ME35N06 Description

N-Channel 60-V (D-S) MOSFET ME35N06/ME35N06-G GENERAL .
The ME35N06-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

ME35N06 Features

* RDS(ON)≦32mΩ@VGS=10V
* RDS(ON)≦40mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)

ME35N06 Applications

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter (TO-252-3L) Top View The Ordering Information: ME35N06/ME35N06-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwi

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Datasheet Details

Part number
ME35N06
Manufacturer
Matsuki
File Size
1.57 MB
Datasheet
ME35N06-Matsuki.pdf
Description
N-Channel 60V (D-S) MOSFET

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N-Channel 60V D-S MOSFET Matsuki
Matsuki ME35N06-like datasheet