ME35N06 Datasheet (Matsuki) - N-Channel 60V (D-S) MOSFET

ME35N06, N-Channel 60V (D-S) MOSFET

The ME35N06-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on state resistance.

These devices are particularly suited for low voltage application such as cellular

ME35N06 Features

* RDS(ON)≦32mΩ@VGS=10V

* RDS(ON)≦40mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverter