ME35N06-G, ME35N06 Datasheet - Matsuki

ME35N06-G N-Channel 60V (D-S) MOSFET

The ME35N06-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular .

ME35N06-G Features

* RDS(ON)≦32mΩ@VGS=10V

* RDS(ON)≦40mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverter

ME35N06-Matsuki.pdf

ME35N06-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME35N06-G, ME35N06. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME35N06-G, ME35N06

Manufacturer:

Matsuki

File Size:

1.57 MB

Description:

N-channel 60v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME35N06-G, ME35N06.
Please refer to the document for exact specifications by model.

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ME35N06-G ME35N06 N-Channel 60V D-S MOSFET Matsuki

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