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ME35N06F-G, ME35N06F N-Channel 60V (D-S) MOSFET

ME35N06F-G Description

N-Channel 60-V (D-S) MOSFET GENERAL .
The ME35N06F is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

ME35N06F-G Features

* RDS(ON)≦32mΩ@VGS=10V
* RDS(ON)≦40mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)

ME35N06F-G Applications

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter (TO-220F) Top View
* The Ordering Information: ME35N06F (Pb-free) ME35N06F-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Volt

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ME35N06F-G, ME35N06F. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
ME35N06F-G, ME35N06F
Manufacturer
Matsuki
File Size
872.57 KB
Datasheet
ME35N06F-Matsuki.pdf
Description
N-Channel 60V (D-S) MOSFET
Note
This datasheet PDF includes multiple part numbers: ME35N06F-G, ME35N06F.
Please refer to the document for exact specifications by model.

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N-Channel 60V D-S MOSFET Matsuki
Matsuki ME35N06F-G-like datasheet