ME35N06P-G, ME35N06P Datasheet - Matsuki

ME35N06P-G N-Channel 60V (D-S) MOSFET

The ME35N06P is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular p.

ME35N06P-G Features

* RDS(ON)≦32mΩ@VGS=10V

* RDS(ON)≦40mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverter

ME35N06P-Matsuki.pdf

ME35N06P-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME35N06P-G, ME35N06P. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME35N06P-G, ME35N06P

Manufacturer:

Matsuki

File Size:

1.08 MB

Description:

N-channel 60v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME35N06P-G, ME35N06P.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

ME35N06P N-Channel 60V (D-S) MOSFET (Matsuki)

ME35N06 N-Channel 60V (D-S) MOSFET (Matsuki)

ME35N06-G N-Channel 60V (D-S) MOSFET (Matsuki)

ME35N06F N-Channel 60V (D-S) MOSFET (Matsuki)

ME35N06F-G N-Channel 60V (D-S) MOSFET (Matsuki)

ME35N06G N-Channel MOSFET (VBsemi)

ME35N06T N-Channel 60V (D-S) MOSFET (Matsuki)

ME35N06T-G N-Channel 60V (D-S) MOSFET (Matsuki)

TAGS

ME35N06P-G ME35N06P N-Channel 60V D-S MOSFET Matsuki

ME35N06P-G Distributor