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ME5937ED-G

Dual P-Channel MOSFET

ME5937ED-G Features

* RDS(ON)≦62mΩ@VGS=-4.5V

* RDS(ON)≦77mΩ@VGS=-2.5V

* RDS(ON)≦110mΩ@VGS=-1.8V

* RDS(ON)≦180mΩ@VGS=-1.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

ME5937ED-G General Description

The ME5937ED is the Dual P-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellul.

ME5937ED-G Datasheet (920.03 KB)

Preview of ME5937ED-G PDF

Datasheet Details

Part number:

ME5937ED-G

Manufacturer:

Matsuki

File Size:

920.03 KB

Description:

Dual p-channel mosfet.

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ME5937ED-G Dual P-Channel MOSFET Matsuki

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