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ME60P06T-G, ME60P06T P-Channel MOSFET

ME60P06T-G Description

P- Channel 60-V (D-S) MOSFET GENERAL .
The ME60P06T is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

ME60P06T-G Features

* RDS(ON)≦16.5mΩ@VGS=-10V
* RDS(ON)≦20.5mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS(ON)

ME60P06T-G Applications

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter Ordering Information: ME60P06T (Pb-free) ME60P06T-G (Green product-Halogen free ) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Con

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ME60P06T-G, ME60P06T. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
ME60P06T-G, ME60P06T
Manufacturer
Matsuki
File Size
819.85 KB
Datasheet
ME60P06T-Matsuki.pdf
Description
P-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: ME60P06T-G, ME60P06T.
Please refer to the document for exact specifications by model.

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P-Channel MOSFET Matsuki
Matsuki ME60P06T-G-like datasheet