ME70N03S-G, ME70N03S - 30V N-Channel Enhancement Mode MOSFET

Matsuki

Datasheet Details

Part number	ME70N03S-G, ME70N03S
Manufacturer	Matsuki
File Size	1.33 MB
Description	30V N-Channel Enhancement Mode MOSFET
Datasheet	ME70N03S-Matsuki.pdf
Note	This datasheet PDF includes multiple part numbers: ME70N03S-G, ME70N03S. Please refer to the document for exact specifications by model.

The ME70N03S is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

RDS(ON)≦6.6mΩ@VGS=10V.
RDS(ON)≦11mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current particularly suited for low voltage.

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Published: Mar 22, 2018 |