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ME70N06T-G

N-Channel 60-V (D-S) MOSFET

ME70N06T-G Features

* RDS(ON)≦12mΩ@VGS=10V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverter

* The Ordering Informat

ME70N06T-G General Description

The ME70N06T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application su.

ME70N06T-G Datasheet (1.12 MB)

Preview of ME70N06T-G PDF

Datasheet Details

Part number:

ME70N06T-G

Manufacturer:

Matsuki

File Size:

1.12 MB

Description:

N-channel 60-v (d-s) mosfet.

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ME70N06T-G N-Channel 60-V D-S MOSFET Matsuki

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