ME70N06T-G, ME70N06T Datasheet - Matsuki

ME70N06T-G N-Channel 60-V (D-S) MOSFET

The ME70N06T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application su.

ME70N06T-G Features

* RDS(ON)≦12mΩ@VGS=10V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverter

* The Ordering Informat

ME70N06T-Matsuki.pdf

ME70N06T-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME70N06T-G, ME70N06T. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME70N06T-G, ME70N06T

Manufacturer:

Matsuki

File Size:

1.12 MB

Description:

N-channel 60-v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME70N06T-G, ME70N06T.
Please refer to the document for exact specifications by model.

ME70N06T-G Distributor

📁 Related Datasheet

ME70N06T N-Channel 60-V (D-S) MOSFET (Matsuki)

ME70N03 N-Channel Enhancement Mode MOSFET (Matsuki)

ME70N03A 25V N-Channel Enhancement Mode MOSFET (Matsuki)

ME70N03S 30V N-Channel Enhancement Mode MOSFET (Matsuki)

ME70N03S-G 30V N-Channel Enhancement Mode MOSFET (Matsuki)

ME70N10T N- Channel 100-V (D-S) MOSFET (Matsuki)

ME70N10T-G N- Channel 100-V (D-S) MOSFET (Matsuki)

ME700802 Three-Phase Diode Bridge Modules (20 Amperes/800 Volts) (Powerex Powers)

TAGS

ME70N06T-G ME70N06T N-Channel 60-V D-S MOSFET Matsuki