Description
The ME70N06T is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology.This high density process is especially tailored to
minimize on-state resistance.These devices are particularly suited
for low voltage application such as cellular phone, notebook
computer power management and other battery powered circuits,
and low in-line power loss that are needed in a very small outline
surface mount package.PIN CONFIGURAT
Features
- RDS(ON)≦12mΩ@VGS=10V.
- Super high density cell design for extremely low RDS(ON).
- Exceptional on-resistance and maximum DC current
capability.