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ME7202-G

Dual N- & P-Channel MOSFET

ME7202-G Features

* RDS(ON) ≦ 31 mΩ@VGS=4.5V (N-Ch)

* RDS(ON) ≦ 43 mΩ@VGS=2.5V(N-Ch)

* RDS(ON) ≦ 74 mΩ@VGS=1.8V(N-Ch)

* RDS(ON) ≦ 73mΩ@VGS=-4.5V(P-Ch)

* RDS(ON) ≦ 120 mΩ@VGS=-2.5V(P-Ch)

* RDS(ON) ≦ 240 mΩ@VGS=-1.8V(P-Ch)

* Super high density cell design for extremely low RDS(ON)

* Exce

ME7202-G General Description

The ME7202 is the dual N-Channel + P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage app.

ME7202-G Datasheet (1.43 MB)

Preview of ME7202-G PDF

Datasheet Details

Part number:

ME7202-G

Manufacturer:

Matsuki

File Size:

1.43 MB

Description:

Dual n- & p-channel mosfet.

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ME7202-G Dual P-Channel MOSFET Matsuki

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