ME8107-G, ME8107 Datasheet - Matsuki

ME8107-G P-Channel Enhancement Mode MOSFET

The ME8107 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as .

ME8107-G Features

* RDS(ON)≦7.2mΩ@VGS=-10V

* RDS(ON)≦12mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* DC/D

ME8107-Matsuki.pdf

ME8107-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME8107-G, ME8107. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME8107-G, ME8107

Manufacturer:

Matsuki

File Size:

866.48 KB

Description:

P-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME8107-G, ME8107.
Please refer to the document for exact specifications by model.

ME8107-G Distributor

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ME8107-G ME8107 P-Channel Enhancement Mode MOSFET Matsuki