ME8107-G, ME8107 P-Channel Enhancement Mode MOSFET

Matsuki

Description

ME8107/ME8107-G P-Channel Enhancement Mode MOSFET, ESD Protected GENERAL .
The ME8107 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

📥 Download Datasheet

ME8107-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME8107-G, ME8107. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: ME8107-G, ME8107
Manufacturer: Matsuki
File Size: 866.48 KB
Datasheet: ME8107-Matsuki.pdf
Description: P-Channel Enhancement Mode MOSFET
Note: This datasheet PDF includes multiple part numbers: ME8107-G, ME8107.
Please refer to the document for exact specifications by model.

Features

* RDS(ON)≦7.2mΩ@VGS=-10V
* RDS(ON)≦12mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS(ON)

Applications

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch
* LCD Display inverter e Ordering Information: ME8107(Pb-free) ME8107-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parame

ME8107-G Distributors

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ME8107 P-Channel Enhancement Mode MOSFET Matsuki

Matsuki ME8107-G-like datasheet