AT28HC256
1.01MB
High-speed paged parallel eeprom. 5 3. Description 6 3.1. Block Diagram 6 4. Electrical Characteristics 7 4.1. Absolute Maximum Ratings7 4.2. DC and AC Operating Range
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AT28HC256 - 256K (32K x 8) High-speed Parallel EEPROM
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Features
• Fast Read Access Time – 70 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes – Internal Control Timer • .
AT28HC256N - High-speed Parallel EEPROM
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..
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• Fast Read Access Time – 90 ns • Automatic Page Write Operation • • • • • • • •
– Internal Address and Data Latches for.
AT28HC64B - 64K (8K x 8) High-speed Parallel EEPROM
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– .
AT28HC64BF - 64K (8K x 8) High Speed Parallel EEPROM
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• Fast Read Access Time – 70 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times
– .
AT28BV16 - 16K 2K x 8 Battery-Voltage CMOS E2PROM
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AT28BV16
Features
• • • • • • • • •
2.7 to 3.6V Supply Full Read and Write Operation Low Power Dissipation 8 mA Active Current 50 µA CMOS Standby Cu.
AT28BV256 - 256K (32K x 8) Battery-Voltage Parallel EEPROMs
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• Single 2.7V - 3.6V Supply • Fast Read Access Time – 200 ns • Automatic Page Write Operation
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AT28BV64 - 64K (8K x 8) Battery-Voltage Parallel EEPROMs
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• 2.7V to 3.6V Supply – Full Read and Write Operation
• Low Power Dissipation – 8 mA Active Current – 50 µA CMOS Standby Current
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AT28BV64B - 64K (8K x 8) Battery-Voltage Parallel EEPROM
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• Single 2.7V to 3.6V Supply • Hardware and Software Data Protection • Low Power Dissipation
– 15mA Active Current – 20µA CMOS Standby Curren.
AT28C010 - 1-Megabit (128K x 8) Paged Parallel Military EEPROM
(ATMEL Corporation)
Features
• Fast Read Access Time - 120 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 128-Bytes – Internal Control Timer .
AT28C010 - 1-megabit (128K x 8) Paged Parallel EEPROM
(ATMEL)
Features
• Fast Read Access Time – 120 ns • Automatic Page Write Operation
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