AT28BV64B
ATMEL Corporation
291.46kb
64k (8k x 8) battery-voltage parallel eeprom. The Atmel® AT28BV64B is a high-performance electrically erasable programmable read only-memory (EEPROM). Its 64K of memory is organiz
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AT28BV64 - 64K (8K x 8) Battery-Voltage Parallel EEPROMs
(ATMEL Corporation)
Features
• 2.7V to 3.6V Supply – Full Read and Write Operation
• Low Power Dissipation – 8 mA Active Current – 50 µA CMOS Standby Current
• Read Acces.
AT28BV16 - 16K 2K x 8 Battery-Voltage CMOS E2PROM
(ATMEL Corporation)
AT28BV16
Features
• • • • • • • • •
2.7 to 3.6V Supply Full Read and Write Operation Low Power Dissipation 8 mA Active Current 50 µA CMOS Standby Cu.
AT28BV256 - 256K (32K x 8) Battery-Voltage Parallel EEPROMs
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Features
• Single 2.7V - 3.6V Supply • Fast Read Access Time – 200 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 64 Byte.
AT28C010 - 1-Megabit (128K x 8) Paged Parallel Military EEPROM
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Features
• Fast Read Access Time - 120 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 128-Bytes – Internal Control Timer .
AT28C010 - 1-megabit (128K x 8) Paged Parallel EEPROM
(ATMEL)
Features
• Fast Read Access Time – 120 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 128 Bytes – Internal Control Timer .
AT28C010 - 1-Megabit (128K x 8) Paged Parallel EEPROM
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1-Megabit (128K x 8) Paged Parallel EEPROM
Features
• Fast Read Access Time: 120 ns • Automatic Page Write Operation:
– Internal address and data latc.
AT28C010-12DK - Space 1-MBit (128K x 8) Paged Parallel EEPROM
(ATMEL)
Features
• Fast Read Access Time – 120 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 128 Bytes
– Internal Control Timer .
AT28C040 - 4-Megabit (512K x 8) Paged Parallel EEPROM
(ATMEL Corporation)
Features
• Read Access Time – 200 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 256 Bytes – Internal Control Timer • Fas.
AT28C16 - 16K 2K x 8 CMOS E2PROM
(ATMEL Corporation)
Features
• Fast Read Access Time - 150 ns • Fast Byte Write - 200 µs or 1 ms • Self-Timed Byte Write Cycle
– Internal Address and Data Latches – Inter.
AT28C16-T - 16K (2K x 8) PCMCIA Nonvolatile Attribute Memory
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Features
• Ideal Rewritable Attribute Memory • Simple Write Operation
– Self-Timed Byte Writes – On-chip Address and Data Latch for SRAM-like Write Op.