Paged Datasheet | Specifications & PDF Download

Features • Fast Read Access Time – 120 ns • Automatic Page Write Operation – Internal Address and Data Latches for 128 Bytes – Internal Control Timer

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Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes – Internal Control Timer •

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Features • Fast Read Access Time - 120 ns • Automatic Page Write Operation – Internal Address and Data Latches for 128-Bytes – Internal Control Timer

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Features • Read Access Time – 200 ns • Automatic Page Write Operation – Internal Address and Data Latches for 256 Bytes – Internal Control Timer • Fas

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Features • Single 3.3V ± 10% Supply • Fast Read Access Time – 200 ns • Automatic Page Write Operation – Internal Address and Data Latches for 128 Byte

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Features • Fast Read Access Time – 120 ns • Automatic Page Write Operation – Internal Address and Data Latches for 128 Bytes – Internal Control Timer

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M25P10 1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface PRELIMINARY DATA s s s s s s s s s s s s s 1 Mbit PAGED Flash Memor

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AT28C256 Features • • • • • • • • • • • Fast Read Access Time - 150 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes

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M25P10 1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface PRELIMINARY DATA s 1 Mbit PAGED Flash Memory s 128 BYTE PAGE PROGRA

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256-Kbit (32,768 x 8) Industrial High‑Speed Parallel EEPROM AT28HC256 Features • Fast Read Access Time: 70 ns • Automatic Page Write Operation: – Inte

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1-Megabit (128K x 8) Paged Parallel EEPROM Features • Fast Read Access Time: 120 ns • Automatic Page Write Operation: – Internal address and data latc

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