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AT28LV010 - 1-Megabit (128K x 8) Low Voltage Paged Parallel EEPROM
Features • Single 3.3V ± 10% Supply • Fast Read Access Time – 200 ns • Automatic Page Write Operation – Internal Address and Data Latches for 128 Byte.M25P10 - 1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface
M25P10 1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface PRELIMINARY DATA s s s s s s s s s s s s s 1 Mbit PAGED Flash Memor.AT28C256 - 256K (32K x 8) Paged Parallel EEPROM
Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes – Internal Control Timer •.AT28C010 - 1-Megabit (128K x 8) Paged Parallel Military EEPROM
Features • Fast Read Access Time - 120 ns • Automatic Page Write Operation – Internal Address and Data Latches for 128-Bytes – Internal Control Timer .AT28C040 - 4-Megabit (512K x 8) Paged Parallel EEPROM
Features • Read Access Time – 200 ns • Automatic Page Write Operation – Internal Address and Data Latches for 256 Bytes – Internal Control Timer • Fas.AT28C010-12DK - Space 1-MBit (128K x 8) Paged Parallel EEPROM
Features • Fast Read Access Time – 120 ns • Automatic Page Write Operation – Internal Address and Data Latches for 128 Bytes – Internal Control Timer .28C256 - 256K 32K x 8 Paged CMOS E2PROM
AT28C256 Features • • • • • • • • • • • Fast Read Access Time - 150 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes.25P10 - 1 Mbit Low Voltage Paged Flash Memory
M25P10 1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface PRELIMINARY DATA s 1 Mbit PAGED Flash Memory s 128 BYTE PAGE PROGRA.AT28C010 - 1-megabit (128K x 8) Paged Parallel EEPROM
Features • Fast Read Access Time – 120 ns • Automatic Page Write Operation – Internal Address and Data Latches for 128 Bytes – Internal Control Timer .AT28HC256 - High-Speed Paged Parallel EEPROM
256-Kbit (32,768 x 8) Industrial High‑Speed Parallel EEPROM AT28HC256 Features • Fast Read Access Time: 70 ns • Automatic Page Write Operation: – Inte.AT28C010 - 1-Megabit (128K x 8) Paged Parallel EEPROM
1-Megabit (128K x 8) Paged Parallel EEPROM Features • Fast Read Access Time: 120 ns • Automatic Page Write Operation: – Internal address and data latc.