AT28LV010 Datasheet (ATMEL Corporation) - 1-Megabit (128K x 8) Low Voltage Paged Parallel EEPROM

AT28LV010, 1-Megabit (128K x 8) Low Voltage Paged Parallel EEPROM

The AT28LV010 is a high-performance 3-volt only Electrically Erasable and Programmable Read-Only Memory.

Its 1 megabit of memory is organized as 131,072 words by 8 bits.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

AT28LV010 Features

* Single 3.3V ± 10% Supply

* Fast Read Access Time

* 200 ns

* Automatic Page Write Operation

* Internal Address and Data Latches for 128 Bytes

* Internal Control Timer

* Fast Write Cycle Time

* Page Write Cycle Time

* 10 ms Maxi