AT28LV010
ATMEL Corporation
213.66kb
1-megabit (128k x 8) low voltage paged parallel eeprom. The AT28LV010 is a high-performance 3-volt only Electrically Erasable and Programmable Read-Only Memory. Its 1 megabit of memory is o
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AT28LV256 - 256K 32K x 8 Low Voltage CMOS E2PROM
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Features
• • • • • • • • • •
Fast Read Access Time - 200 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes .
AT28LV64B - 64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection
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Features
• • • • • • • • • • •
Single 3.3V ± 10% Supply 3-Volt-Only Read and Write Operation Software-Protected Programming Low Power Diss.
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Features
• • • • • • • • •
2.7 to 3.6V Supply Full Read and Write Operation Low Power Dissipation 8 mA Active Current 50 µA CMOS Standby Cu.
AT28BV256 - 256K (32K x 8) Battery-Voltage Parallel EEPROMs
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Features
• Single 2.7V - 3.6V Supply • Fast Read Access Time – 200 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 64 Byte.
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Features
• 2.7V to 3.6V Supply – Full Read and Write Operation
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AT28BV64B - 64K (8K x 8) Battery-Voltage Parallel EEPROM
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• Fast Read Access Time - 120 ns • Automatic Page Write Operation
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• Fast Read Access Time – 120 ns • Automatic Page Write Operation
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1-Megabit (128K x 8) Paged Parallel EEPROM
Features
• Fast Read Access Time: 120 ns • Automatic Page Write Operation:
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AT28C010-12DK - Space 1-MBit (128K x 8) Paged Parallel EEPROM
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Features
• Fast Read Access Time – 120 ns • Automatic Page Write Operation
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