AT28C010
468.22kb
1-megabit (128k x 8) paged parallel eeprom. 5 3. Description 6 3.1. Block Diagram 6 4. Electrical Characteristics7 4.1. Absolute Maximum Ratings7 4.2. DC and AC Operating Range
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AT28C010 - 1-Megabit (128K x 8) Paged Parallel Military EEPROM
(ATMEL Corporation)
Features
• Fast Read Access Time - 120 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 128-Bytes – Internal Control Timer .
AT28C010 - 1-megabit (128K x 8) Paged Parallel EEPROM
(ATMEL)
Features
• Fast Read Access Time – 120 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 128 Bytes – Internal Control Timer .
AT28C010-12DK - Space 1-MBit (128K x 8) Paged Parallel EEPROM
(ATMEL)
Features
• Fast Read Access Time – 120 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 128 Bytes
– Internal Control Timer .
AT28C040 - 4-Megabit (512K x 8) Paged Parallel EEPROM
(ATMEL Corporation)
Features
• Read Access Time – 200 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 256 Bytes – Internal Control Timer • Fas.
AT28C16 - 16K 2K x 8 CMOS E2PROM
(ATMEL Corporation)
Features
• Fast Read Access Time - 150 ns • Fast Byte Write - 200 µs or 1 ms • Self-Timed Byte Write Cycle
– Internal Address and Data Latches – Inter.
AT28C16-T - 16K (2K x 8) PCMCIA Nonvolatile Attribute Memory
(ATMEL)
Features
• Ideal Rewritable Attribute Memory • Simple Write Operation
– Self-Timed Byte Writes – On-chip Address and Data Latch for SRAM-like Write Op.
AT28C17 - 16K 2K x 8 CMOS E2PROM
(ATMEL Corporation)
AT28C17
Features
• • • • • • • • • •
Fast Read Access Time - 150 ns Fast Byte Write - 200 µs or 1 ms Self-Timed Byte Write Cycle Internal Address an.
AT28C256 - 256K (32K x 8) Paged Parallel EEPROM
(ATMEL Corporation)
Features
• Fast Read Access Time – 150 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes – Internal Control Timer •.
AT28C64 - 64K (8K x 8) Parallel EEPROMs
(ATMEL Corporation)
Features
• Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle
– Internal Address and Data Latches – Inter.
AT28C64B - 64K (8K x 8) Parallel EEPROM
(ATMEL Corporation)
Features
• Fast Read Access Time – 150 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times
–.