LX5506E Datasheet - Microsemi Corporation

LX5506E, InGaP HBT 4 - 6GHz Power Amplifier

LX5506E I N T E G R A T E D P R O D U C T S InGaP HBT 4 * 6GHz Power Amplifier P RELIMINARY D ATA S HEET .
KEY FEATURES. Advanced InGaP HBT 4.

LX5506E_MicrosemiCorporation.pdf

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Datasheet Details

Part number:

LX5506E

Manufacturer:

Microsemi ↗ Corporation

File Size:

353.62 KB

Description:

InGaP HBT 4 - 6GHz Power Amplifier

Features

* Advanced InGaP HBT 4.9-5.85GHz Operation Single-Polarity 3.3V Supply Total Current ~ 200mA for Pout=19dBm at 5.25GHz P1dB > +26dBm Power Gain ~ 23dB at 5.25GHz & Pout=19dBm EVM ~ 3% for 64QAM/ 54Mbps & Pout=19dBm Integrate

Applications

* in the 4.9-5.85 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, onchip input matching and output prematching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It also

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