MX043 Datasheet - Microsemi

MX043 RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25° C RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS PD Tj Tstg IS ISM θJC MAX. 200 200 +/-20 +/-30 44 28 132 44 tbd tbd 300 -55 to +125 -55 to +125 44.

MX043 Features

* Harris FSC260R die total dose: 100 kRAD(Si) within pre-radiation parameter limits dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical dose rate: 2 x 1012 RAD(Si)/sec @ ID ≤ IDM typical neutron

MX043_Microsemi.pdf