MX086-4 - Battery Bypass Charge Diode

Microsemi

MX086-4 Datasheet Preview — Preview of MX086-4 PDF

Datasheet Details

Part number	MX086-4
Manufacturer	Microsemi
File Size	49.82 KB
Description	Battery Bypass Charge Diode
Datasheet	MX086-4_Microsemi.pdf

MX086-4 Product details

Description

Peak Repetitive Reverse Voltage (NOT A BLOCKING DIODE!) Average Rectified Forward Current, Tc≤ 125°C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Junction Temperature Range (for bypass operation) Storage Temperature Range Thermal Resistance, Junction to Case: DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, pw= 300 µs, d/c≤ 2% SYMBOL IR VF1 VF2 VF3 CONDITIONS VR= 60 Vdc, Tc= 25°C IF= 100 mA, Tc= 25°C IF= 5 A, Tc= 25°C IF = 10A, Tc= 25°C MAX.60 50 300 -20 to +275

Features

Standard spacecraft screening is per Microsemi PS11.50 “S” (no suffix letter required, MX086-4 is only “S” screened) Designed for battery cell bypass Passivated mesa structure for very low leakage currents 4 die stacked in one package Hermetically sealed, ceramic surface mount power package Maximum Ratings @ 25°C (unless otherwise specified).

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Published: Jul 2, 2005 |