MX086-4 Datasheet - Microsemi

MX086-4 Battery Bypass Charge Diode

Peak Repetitive Reverse Voltage (NOT A BLOCKING DIODE!) Average Rectified Forward Current, Tc≤ 125°C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Junction Temperature Range (for bypass operation) Storage Temperature Range Thermal Resistance, Junction to Case: DESCRIPTION Reverse (Leak.

MX086-4 Features

* Standard spacecraft screening is per Microsemi PS11.50 “S” (no suffix letter required, MX086-4 is only “S” screened) Designed for battery cell bypass Passivated mesa structure for very low leakage currents 4 die stacked in one package Hermetically se

MX086-4 Datasheet (49.82 KB)