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ICE60N800D Datasheet - Micross Components

ICE60N800D, N-Channel MOSFET

ICE60N800D N-Channel Enhancement Mode MOSFET .
TO-252 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current A.
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Datasheet Details

Part number:

ICE60N800D

Manufacturer:

Micross Components

File Size:

707.34 KB

Description:

N-Channel MOSFET

Features

* r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified P

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