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ICE60N160B - N-Channel MOSFET

ICE60N160B Description

ICE60N160B N-Channel Enhancement Mode MOSFET .
TO-263 G Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous.

ICE60N160B Features

* r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 2

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Datasheet Details

Part number
ICE60N160B
Manufacturer
Micross Components
File Size
719.99 KB
Datasheet
ICE60N160B-MicrossComponentspdf
Description
N-Channel MOSFET

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N-Channel MOSFET Micross Components
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