MGFC42V7177 C band Internally Matched Power GaAs FET

Mitsubishi Electric Semiconductor

Description

MGFC42V7177 7.1 - 7.7GHz BAND / 16W .
The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7. 7.

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Datasheet Specifications

Part number: MGFC42V7177
Manufacturer: Mitsubishi Electric Semiconductor
File Size: 160.60 KB
Datasheet: MGFC42V7177_MitsubishiElectricSemiconductor.pdf
Description: C band Internally Matched Power GaAs FET

Features

* Crass A operation Internally matched to 50(ohm)
* High output power: P1dB = 16 W (typ. ) @ P1dB
* High power gain: GLP = 8.0 dB (typ. )

Applications

* item 01 : 7.1
* 7.7GHz band power amplifier
* item 51 : 7.1
* 7.7GHz band digital radio communication QUALITY
* IG RECOMMENDED BIAS CONDITIONS
* Vds = 10 V
* Ids = 4.5 A
* Rg = 25  www. DataSheet. net/ Absolute maximum ratings (Ta = 25 C) Symbol Parameter

MGFC42V7177 Distributors

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MGFC42V7177 band Internally Matched Power GaAs FET Mitsubishi Electric Semiconductor

Mitsubishi Electric Semiconductor MGFC42V7177-like datasheet