Part number:
MGFC42V7177
Manufacturer:
Mitsubishi Electric Semiconductor
File Size:
160.60 KB
Description:
C band internally matched power gaas fet.
MGFC42V7177 Datasheet (160.60 KB)
* Crass A operation Internally matched to 50(ohm)
* High output power: P1dB = 16 W (typ.) @ P1dB
* High power gain: GLP = 8.0 dB (typ.)
* High power added efficiency: PAE = 30 % (typ.) APPLICATIONS
* item 01 : 7.1
* 7.7GHz band power amplifier
* item 51 : 7.1
* 7.7
MGFC42V7177 Datasheet (160.60 KB)
MGFC42V7177
Mitsubishi Electric Semiconductor
160.60 KB
C band internally matched power gaas fet.
📁 Related Datasheet
MGFC42V7785A C band internally matched power GaAs FET (Mitsubishi)
MGFC42V3436 C band internally matched power GaAs FET (Mitsubishi)
MGFC42V3742 C band internally matched power GaAs FET (Mitsubishi)
MGFC42V3742A 3.7- 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET (Mitsubishi)
MGFC42V4450 C band internally matched power GaAs FET (Mitsubishi)
MGFC42V4450A 4.4 - 5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET (Mitsubishi)
MGFC42V5258 C band internally matched power GaAs FET (Mitsubishi)
MGFC42V5867 16W INTERNALLHY MATCHED GaAs FET (Mitsubishi Electric)
MGFC42V5964 C band internally matched power GaAs FET (Mitsubishi)
MGFC42V5964A C band internally matched power GaAs FET (Mitsubishi Electric)
TAGS
Image Gallery
