MGFC42V7177 Datasheet - Mitsubishi Electric Semiconductor

MGFC42V7177 C band Internally Matched Power GaAs FET

MGFC42V7177 Features

* Crass A operation Internally matched to 50(ohm)

* High output power: P1dB = 16 W (typ.) @ P1dB

* High power gain: GLP = 8.0 dB (typ.)

* High power added efficiency: PAE = 30 % (typ.) APPLICATIONS

* item 01 : 7.1

* 7.7GHz band power amplifier

* item 51 : 7.1

* 7.7

Datasheet Details

MGFC42V7177

Mitsubishi Electric Semiconductor

160.60 KB

C band internally matched power gaas fet.

MGFC42V7177 Distributor

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