MGFC42V7785A - C band internally matched power GaAs FET

Mitsubishi

Datasheet Details

Part number	MGFC42V7785A
Manufacturer	Mitsubishi
File Size	95.70 KB
Description	C band internally matched power GaAs FET
Datasheet	MGFC42V7785A_MitsubishiElectricSemiconductor.pdf

The MGFC42V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 8.5 GHz band amplifiers.

Class A operation Internally matched to 50(ohm) system.
High output power P1dB=16W (TYP. ) @f=7.7.
8.5GHz.
High power gain GLP=7.0dB (TYP. ) @f=7.7.
8.5GHz.
High power added efficiency P. A. E. =28% (TYP. ) @f=7.7.
8.5GHz.
Low distortion [item -51] IM3=-45dBc (TYP. ) @Po=32.0dBm S. C. L 2MIN 17.4 +/- 0.2 8.0 +/- 0.2 2MIN.

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Published: Apr 29, 2005 |