MGFC40V5964 - C band internally matched power GaAs FET
MGFC40V5964 Features
* Class A operation Internally matched to 50(ohm) system
* High output power P1dB=10W (TYP.) @f=5.9
* 6.4GHz
* High power gain GLP=10dB (TYP.) @f=5.9
* 6.4GHz
* High power added efficiency P.A.E.=30% (TYP.) @f=5.9
* 6.4GHz
* Low distortion [item -51] IM3=-49dBc
