MGFC40V5964 C band internally matched power GaAs FET

Mitsubishi Electric

Description

< C band internally matched power GaAs FET > MGFC40V5964 5.9 * 6.4 GHz BAND / 10W .
The MGFC40V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5. 6.

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Datasheet Specifications

Part number: MGFC40V5964
Manufacturer: Mitsubishi Electric
File Size: 87.72 KB
Datasheet: MGFC40V5964_MitsubishiElectric.pdf
Description: C band internally matched power GaAs FET

Features

* Class A operation Internally matched to 50(ohm) system
* High output power P1dB=10W (TYP. ) @f=5.9
* 6.4GHz
* High power gain GLP=10dB (TYP. ) @f=5.9
* 6.4GHz
* High power added efficiency P. A. E. =30% (TYP. ) @f=5.9
* 6.4GHz
* Low distortion [item -51] IM3=-49dBc

MGFC40V5964 Distributors

📁 Related Datasheet

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MGFC40V5964 band internally matched power GaAs FET Mitsubishi Electric

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