Datasheet4U Logo Datasheet4U.com

MGFC42V5964A - C band internally matched power GaAs FET

Datasheet Summary

Description

The MGFC42V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9

6.4 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Internally matched to 50(ohm) system.
  • High output power P1dB=16W (TYP. ) @f=5.9.
  • 6.4GHz.
  • High power gain GLP=9.0dB (TYP. ) @f=5.9.
  • 6.4GHz.
  • High power added efficiency P. A. E. =33% (TYP. ) @f=5.9.
  • 6.4GHz.
  • Low distortion [item -51] IM3=-45dBc (TYP. ) @Po=31.0dBm S. C. L.

📥 Download Datasheet

Datasheet preview – MGFC42V5964A

Datasheet Details

Part number MGFC42V5964A
Manufacturer Mitsubishi Electric
File Size 105.08 KB
Description C band internally matched power GaAs FET
Datasheet download datasheet MGFC42V5964A Datasheet
Additional preview pages of the MGFC42V5964A datasheet.

📁 Similar Datasheet

  • MGFC42V5964 - C band internally matched power GaAs FET (Mitsubishi)
  • MGFC42V5258 - C band internally matched power GaAs FET (Mitsubishi)
  • MGFC42V3436 - C band internally matched power GaAs FET (Mitsubishi)
  • MGFC42V3742 - C band internally matched power GaAs FET (Mitsubishi)
  • MGFC42V3742A - 3.7- 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET (Mitsubishi)
  • MGFC42V4450 - C band internally matched power GaAs FET (Mitsubishi)
  • MGFC42V4450A - 4.4 - 5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET (Mitsubishi)
  • MGFC42V6472 - C band internally matched power GaAs FET (Mitsubishi)
  • MGFC42V7177 - C band Internally Matched Power GaAs FET (Mitsubishi Electric Semiconductor)
  • MGFC42V7785A - C band internally matched power GaAs FET (Mitsubishi)
Other Datasheets by Mitsubishi Electric

Full PDF Text Transcription

Click to expand full text
< C band internally matched power GaAs FET > MGFC42V5964A 5.9 – 6.4 GHz BAND / 16W DESCRIPTION The MGFC42V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally matched to 50(ohm) system  High output power P1dB=16W (TYP.) @f=5.9 – 6.4GHz  High power gain GLP=9.0dB (TYP.) @f=5.9 – 6.4GHz  High power added efficiency P.A.E.=33% (TYP.) @f=5.9 – 6.4GHz  Low distortion [item -51] IM3=-45dBc (TYP.) @Po=31.0dBm S.C.L APPLICATION  item 01 : 5.9 – 6.4 GHz band power amplifier  item 51 : 5.9 – 6.4 GHz band digital radio communication QUALITY  IG 2MIN 17.4 +/- 0.2 8.0 +/- 0.2 2MIN OUTLINE R1.2 24 +/- 0.3 unit : mm 0.6 +/- 0.
Published: |