MGFC47B3538B Datasheet - Mitsubishi Electric Semiconductor

MGFC47B3538B C band Internally Matched Power GaAs FET

MGFC47B3538B Features

* Crass AB operation Internally matched to 50(ohm)

* High output power: Po(SAT) = 50 W (typ.)

* High power gain: GP = 10 dB (TPE.) @Po = 37dBm

* Distortion: EVM = 2.0% (TPE.) @ Po = 37dBm Recommended Bias Condition

* Vd = 12(V)

* ID = 1.5 (A)

* Rg = 10 ohm GF-60 www.DataSheet

Datasheet Details

MGFC47B3538B

Mitsubishi Electric Semiconductor

202.16 KB

C band internally matched power gaas fet.

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