MGFC47B3538B - C band Internally Matched Power GaAs FET
MGFC47B3538B Features
* Crass AB operation Internally matched to 50(ohm)
* High output power: Po(SAT) = 50 W (typ.)
* High power gain: GP = 10 dB (TPE.) @Po = 37dBm
* Distortion: EVM = 2.0% (TPE.) @ Po = 37dBm Recommended Bias Condition
* Vd = 12(V)
* ID = 1.5 (A)
* Rg = 10 ohm GF-60 www.DataSheet
