MGFC47B3538B

C band Internally Matched Power GaAs FET

Mitsubishi Electric Semiconductor

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Datasheet Details

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MGFC47B3538B

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Mitsubishi Electric Semiconductor

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Description:

C band internally matched power gaas fet.
MGFC47B3538B 3.5 * 3.8GHz BAND / 50W DESCRIPTION The MG.
The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3..

✔ MGFC47B3538B Features

Crass AB operation Internally matched to 50(ohm)
High output power: Po(SAT) = 50 W (typ.)
High power gain: GP = 10 dB (TPE.) @Po = 37dBm
Distortion: EVM = 2.0% (TPE

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MGFC47B3538B band Internally Matched Power GaAs FET Mitsubishi Electric Semiconductor

Datasheet Details

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✔ MGFC47B3538B Features

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