MGFC47B3538B Datasheet - Mitsubishi Electric Semiconductor

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MGFC47B3538B C band Internally Matched Power GaAs FET

MGFC47B3538B 3.5 * 3.8GHz BAND / 50W .
The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3. 3.

MGFC47B3538B_MitsubishiElectricSemiconductor.pdf

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Datasheet Details

Part number:

MGFC47B3538B

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

202.16 KB

Description:

C band Internally Matched Power GaAs FET

Features

* Crass AB operation Internally matched to 50(ohm)
* High output power: Po(SAT) = 50 W (typ. )
* High power gain: GP = 10 dB (TPE. ) @Po = 37dBm
* Distortion: EVM = 2.0% (TPE. ) @ Po = 37dBm Recommended Bias Condition
* Vd = 12(V)
* ID = 1.5 (A)
* Rg = 10 ohm GF-60 www. DataSheet

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MGFC47B3538B band Internally Matched Power GaAs FET Mitsubishi Electric Semiconductor

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