MGFC47V5864 Datasheet - Mitsubishi

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MGFC47V5864 C band internally matched power GaAs FET

< C band internally matched power GaAs FET > MGFC47V5864 5.8 * 6.4 GHz BAND / 50W .
The MGFC47V5864 is an internally impedance-matched GaAs power FET especially designed for use in 5. 6.

MGFC47V5864_MitsubishiElectricSemiconductor.pdf

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Datasheet Details

Part number:

MGFC47V5864

Manufacturer:

Mitsubishi

File Size:

134.72 KB

Description:

C band internally matched power GaAs FET

Features

* Class AB operation Internally matched to 50(ohm) system
* High output power P1dB=50W (TYP. ) @f=5.8
* 6.4GHz
* High power gain GLP=9.5dB (TYP. ) @f=5.8
* 6.4GHz
* High power added efficiency PAE=35% (TYP. ) @f=5.8

MGFC47V5864 Distributors

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MGFC47V5864 band internally matched power GaAs FET Mitsubishi

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