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MGFC47V5864 Datasheet - Mitsubishi

MGFC47V5864 C band internally matched power GaAs FET

MGFC47V5864 Features

* Class AB operation Internally matched to 50(ohm) system

* High output power P1dB=50W (TYP.) @f=5.8

* 6.4GHz

* High power gain GLP=9.5dB (TYP.) @f=5.8

* 6.4GHz

* High power added efficiency PAE=35% (TYP.) @f=5.8

* 6.4GHz APPLICATION

* Solid-state power amplifie

MGFC47V5864_MitsubishiElectricSemiconductor.pdf

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Datasheet Details

Part number:

MGFC47V5864

Manufacturer:

Mitsubishi

File Size:

134.72 KB

Description:

C band internally matched power gaas fet.

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MGFC47V5864 MGFC47V5864 band internally matched power GaAs FET Mitsubishi

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