MGFC47V5864 C band internally matched power GaAs FET

Mitsubishi

Description

< C band internally matched power GaAs FET > MGFC47V5864 5.8 * 6.4 GHz BAND / 50W .
The MGFC47V5864 is an internally impedance-matched GaAs power FET especially designed for use in 5. 6.

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Datasheet Specifications

Part number: MGFC47V5864
Manufacturer: Mitsubishi
File Size: 134.72 KB
Datasheet: MGFC47V5864_MitsubishiElectricSemiconductor.pdf
Description: C band internally matched power GaAs FET

Features

* Class AB operation Internally matched to 50(ohm) system
* High output power P1dB=50W (TYP. ) @f=5.8
* 6.4GHz
* High power gain GLP=9.5dB (TYP. ) @f=5.8
* 6.4GHz
* High power added efficiency PAE=35% (TYP. ) @f=5.8

MGFC47V5864 Distributors

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MGFC47V5864 band internally matched power GaAs FET Mitsubishi

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