MGFC40V5258 Datasheet - Mitsubishi

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MGFC40V5258 C band internally matched power GaAs FET

< C band internally matched power GaAs FET > MGFC40V5258 5.2 * 5.8 GHz BAND / 10W .
The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5. 5.

MGFC40V5258_MitsubishiElectricSemiconductor.pdf

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Datasheet Details

Part number:

MGFC40V5258

Manufacturer:

Mitsubishi

File Size:

96.87 KB

Description:

C band internally matched power GaAs FET

Features

* Internally matched to 50(ohm) system
* High output power P1dB=10W (TYP. ) @f=5.2
* 5.8GHz
* High power gain GLP=9.0dB (TYP. ) @f=5.2
* 5.8GHz
* High power added efficiency P. A. E. =31% (TYP. ) @f=5.2
* 5.8GHz
* Low distortion [item -51] IM3=-45dBc (

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MGFC40V5258 band internally matched power GaAs FET Mitsubishi

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