MGFC40V5258 - C band internally matched power GaAs FET
MGFC40V5258 Features
* Internally matched to 50(ohm) system
* High output power P1dB=10W (TYP.) @f=5.2
* 5.8GHz
* High power gain GLP=9.0dB (TYP.) @f=5.2
* 5.8GHz
* High power added efficiency P.A.E.=31% (TYP.) @f=5.2
* 5.8GHz
* Low distortion [item -51] IM3=-45dBc (
