MGFC40V7177 C band internally matched power GaAs FET

Mitsubishi

Description

< C band internally matched power GaAs FET > MGFC40V7177 7.1 * 7.7 GHz BAND / 10W .
The MGFC40V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7. 7.

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Datasheet Specifications

Part number: MGFC40V7177
Manufacturer: Mitsubishi
File Size: 96.83 KB
Datasheet: MGFC40V7177_MitsubishiElectricSemiconductor.pdf
Description: C band internally matched power GaAs FET

Features

* Internally matched to 50(ohm) system
* High output power P1dB=10W (TYP. ) @f=7.1
* 7.7GHz
* High power gain GLP=8.0dB (TYP. ) @f=7.1
* 7.7GHz
* High power added efficiency P. A. E. =30% (TYP. ) @f=7.1
* 7.7GHz
* Low distortion [item -51] IM3=-45dBc (

MGFC40V7177 Distributors

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MGFC40V7177 band internally matched power GaAs FET Mitsubishi

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