MGFC40V7785 C band internally matched power GaAs FET

Mitsubishi

Description

< C band internally matched power GaAs FET > MGFC40V7785 7.7 * 8.5 GHz BAND / 10W .
The MGFC40V7785 is an internally impedance-matched GaAs power FET especially designed for use in 7. 8.

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Datasheet Specifications

Part number: MGFC40V7785
Manufacturer: Mitsubishi
File Size: 113.50 KB
Datasheet: MGFC40V7785_MitsubishiElectricSemiconductor.pdf
Description: C band internally matched power GaAs FET

Features

* Class A operation Internally matched to 50(ohm) system
* High output power P1dB=10W (TYP. ) @f=7.7
* 8.5GHz
* High power gain GLP=7dB (TYP. ) @f=7.7
* 8.5GHz
* High power added efficiency P. A. E. =32% (TYP. ) @f=7.7
* 8.5GHz
* Low distortion [item -51] IM3=-45dBc (

MGFC40V7785 Distributors

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MGFC40V7785 band internally matched power GaAs FET Mitsubishi

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