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RA07N4047M-01 Datasheet - Mitsubishi Electric Semiconductor

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Datasheet Details

Part number:

RA07N4047M-01

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

62.20 KB

Description:

Mitsubishi rf mosfet module.

RA07N4047M-01, MITSUBISHI RF MOSFET MODULE

The RA07N4047M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 400- to 470-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

Without the gate voltage (V GG=0V), only a small leakage current flows into t

RA07N4047M-01 Features

* Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=9.6V, VGG=0V)

* Pout>7.5W @ VDD=9.6V, VGG=3.5V, Pin=20mW

* ηT>43% @ Pout=7W (V GG control), VDD=9.6V, Pin=20mW

* Broadband Frequency Range: 400-470MHz

* Low-Power Control Current IGG=1mA (typ) at VGG=3.5V

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