* Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V)
* Pout>7W @ VDD=12.5V, VGG=3.5V, Pin=20mW
* ηT>40% @ Pout=7W (V GG control), VDD=12.5V, Pin=20mW www.DataSheet4U.com 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Ba
RA07H3340M Datasheet (91.76 KB)
RA07H3340M
Mitsubishi Electric
91.76 KB
Rf mosfet module 330-400mhz 7w 12.5v portable/ mobile radio.
MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA07H3340M
BLOCK DIAGRAM
2 3
330-400MHz 7W 12.5V PORTABLE/ M.
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