RA07H4047M 400-470MHz 7W 12.5V/ 2 Stage Amp. For PORTABLE/ MOBILE RADIO

Mitsubishi Electric Semiconductor

Description

MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H4047M BLOCK DIAGRAM 2 3 400-470MHz 7W 12.5V, 2 Stage Am.
The RA07H4047M is a 7-watt RF MOSFET Amplifier Module for 12.

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Datasheet Specifications

Part number: RA07H4047M
Manufacturer: Mitsubishi Electric Semiconductor
File Size: 66.72 KB
Datasheet: RA07H4047M_MitsubishiElectricSemiconductor.pdf
Description: 400-470MHz 7W 12.5V/ 2 Stage Amp. For PORTABLE/ MOBILE RADIO

Features

* Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V)
* Pout>7W @ VDD=12.5V, VGG=3.5V, Pin=20mW
* ηT>40% @ Pout=7W (V GG control), VDD=12.5V, Pin=20mW
* Broadband Frequency Range: 400-470MHz
* Low-Power Control Current IGG=1mA (typ) at VGG=3.5V

RA07H4047M Distributors

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RA07H4047M 400-470MHz 12.5V Stage Amp. For PORTABLE MOBILE RADIO Mitsubishi Electric Semiconductor

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