* Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V)
* Pout>7W @ VDD=12.5V, VGG=3.5V, Pin=20mW
* ηT>40% @ Pout=7W (V GG control), VDD=12.5V, Pin=20mW
* Broadband Frequency Range: 400-470MHz
* Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
RA07H4047M-E01 Datasheet (66.72 KB)
RA07H4047M-E01
Mitsubishi Electric Semiconductor
66.72 KB
400-470mhz 7w 12.5v/ 2 stage amp. for portable/ mobile radio.
MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA07H4047M
BLOCK DIAGRAM
2 3
400-470MHz 7W 12.5V, 2 Stage Am.
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