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RA07M2127M

MITSUBISHI RF MOSFET MODULE

RA07M2127M Features

* Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=7.2V, VGG=0V)

* Pout>7W @ VDD=7.2V, VGG=3.5V, Pin=20mW

* ηT>45% @ Pout=6.5W (V GG control), VDD=7.2V, Pin=20mW

* Broadband Frequency Range: 215-270MHz

* Low-Power Control Current IGG=1mA (typ) at VGG=3.5V

RA07M2127M General Description

The RA07M2127M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 215- to 270-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the.

RA07M2127M Datasheet (61.75 KB)

Preview of RA07M2127M PDF

Datasheet Details

Part number:

RA07M2127M

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

61.75 KB

Description:

Mitsubishi rf mosfet module.
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M2127M BLOCK DIAGRAM 2 3 215-270MHz 7W 7.2V, 2Stage Amp..

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RA07M2127M MITSUBISHI MOSFET MODULE Mitsubishi Electric Semiconductor

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