RA07H0608M Datasheet - Mitsubishi Electric Semiconductor

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RA07H0608M MITSUBISHI RF MOSFET MODULE

MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H0608M BLOCK DIAGRAM 2 3 68-88MHz 7W 12.5V, 2 Stage Amp..
The RA07H0608M is a 7-watt RF MOSFET Amplifier Module for 12.

RA07H0608M_MitsubishiElectricSemiconductor.pdf

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Datasheet Details

Part number:

RA07H0608M

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

64.44 KB

Description:

MITSUBISHI RF MOSFET MODULE

Features

* Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V)
* Pout>7W @ VDD=12.5V, VGG=5V, Pin=30mW
* ηT>38% @ Pout=7W (V GG control), VDD=12.5V, Pin=30mW
* Broadband Frequency Range: 68-88MHz
* Low-Power Control Current IGG=1mA (typ) at VGG=5V

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RA07H0608M MITSUBISHI MOSFET MODULE Mitsubishi Electric Semiconductor

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