* Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V)
* Pout>7W @ VDD=12.5V, VGG=5V, Pin=30mW
* ηT>38% @ Pout=7W (V GG control), VDD=12.5V, Pin=30mW
* Broadband Frequency Range: 68-88MHz
* Low-Power Control Current IGG=1mA (typ) at VGG=5V
RA07H0608M Datasheet (64.44 KB)
RA07H0608M
Mitsubishi Electric Semiconductor
64.44 KB
Mitsubishi rf mosfet module.
MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA07H0608M
BLOCK DIAGRAM
2 3
68-88MHz 7W 12.5V, 2 Stage Amp..
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