RA07H0608M Datasheet, Module, Mitsubishi Electric Semiconductor

RA07H0608M Features

• Module
• Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V)
• Pout>7W @ VDD=12.5V, VGG=5V, Pin=30mW
• ηT>38% @ Pout=7W (V GG control), VDD=12.5V, Pin=30mW

PDF File Details

Part number:

RA07H0608M

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

64.44kb

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📄 Datasheet

Description:

Mitsubishi rf mosfet module. The RA07H0608M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 68- to 88-MHz range. The batter

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RA07H0608M

Mitsubishi Electric Semiconductor

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